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2SK2907-01R
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-3PF
15.5 0.3 o3.2 0.2
5.5 0.2 9.3 0.3
5.5
0.3
3.2 +0.3
2.3 0.2
2.10.3
1.6 0.3 1.1 --0.1
+0.2
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
20 Min
21.5
0.3
5.45 0.2
5.45 0.2
0.6 +0.2
3.5 0.2
1. Gate 2. Drain 3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 60 100 400 30 1268.3 125 +150 -55 to +150 Unit
Equivalent circuit schematic
Drain(D)
V A A V mJ W C C *1 L=0.169mH, Vcc=24V
Gate(G) Source(S)
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=60V VGS=0V VGS=30V VDS=0V ID=50A VGS=10V ID=50A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=100A VGS=10V RGS=10 L=100 H Tch=25C IF=100A VGS=0V Tch=25C IF=50A VGS=0V -di/dt=100A/s Tch=25C 100 1.0 85 0.21 1.5
Min.
60 2.5 Tch=25C Tch=125C
Typ.
3.0 10 0.2 10 5.7 55 5400 2100 550 29 200 160 150
Max.
3.5 500 1.0 100 7.8 8100 3150 830 50 350 240 230
Units
V V A mA nA m S pF
25
ns
A V ns C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
1.0 30.0
Units
C/W C/W
1
2SK2907-01R
Characteristics
Power Dissipation PD=f(Tc)
150 10 125
3
FUJI POWER MOSFET
Safe operating area ID=f(VDS):D=0.01,Tc=25C
t= 1s 10s 100 10
2
D.C.
PD [W]
100s 75 1ms 10
1
ID [A]
10ms 100ms
0
50
10 25
t D= T t T
0
0
50
100
150
10
-1
10
-1
10
0
10
1
10
2
10
3
Tc [C]
VDS [V]
200
Typical output characteristics ID=f(VDS):80s pulse test,Tc=25C
VGS=20V 10V 8V 6.0V 5.5V 100
Typical transfer characteristics ID=f(VGS):80s pulse test,VDS=25V,Tch=25C
150
5.0V
ID [A]
100
4.5V
ID [A]
4.0V 3.5V 0 1 2 3 4 5
10
50
1
0
0.1
0
2
4
6
8
10
VDS [V]
VGS [V]
Typical forward transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C
10
3
50
Typical Drain-Source on-State Resistance RDS(on)=f(ID):80s pulse test,Tch=25C
VGS= 3.5V 4.0V 4.5V 5.0V
40
10
2
RDS(on) [m ]
30
gfs [s]
20 5.5V
10
1
10
6V 8V 10V 20V
10 100
0
10
1
10
2
10
3
00
50
100
150
200
ID [A]
ID [A]
2
2SK2907-01R
Drain-source on-state resistance RDS(on)=f(Tch):ID=50A,VGS=10V
20 5.0 4.5 4.0 15 3.5
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=10mA
max. 3.0
RDS(on)[m ]
VGS(th) [V]
max. 10
typ. 2.5 min. 2.0 1.5 1.0 0.5
typ. 5
0
-50
0
50
100
150
0.0
-50
-25
0
25
50
75
100
125
150
Tch [C]
Tch [C]
50
Typical Gate Charge Characteristics VGS=f(Qg):ID=100A,Tch=25C
VDS
Typical capacitances C=f(VDS):VGS=0V,f=1MHz
25
100n
VGS 40
20
10n
30 Vcc=48V 30V 12V 20 10 15
VGS [V]
VDS [V]
C [F]
Ciss
Coss
1n
10
5
Crss
0
0
50
100
150
200
250
0 300
100p
10
-2
10
-1
10
0
10
1
10
2
Qg [nC]
VDS [V]
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C
220 200 180 160 10 140 10
4
Typical Switching Characteristics vs. ID t=f(ID):Vcc=30V,VGS=10V,RG=10
3
IF [A]
120
t [ns]
td(off) tf
100 80 60 40
10V
5V
VGS=0V 10
2
tr
td(on) 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10
1 0 1 2
10
10
10
VSD [V]
ID [A]
3
2SK2907-01R
FUJI POWER MOSFET
Transient thermal impedande Zthch=f(t) parameter:D=t/T
Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch)
120
10
1
100
10
0
0.5 0.2 0.1
80
Zthch-c [K/W]
I(AV) [A]
10
-1
0.05 0.02
t D= t T
60
40
0.01 10
-2
T
0 10
20
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t [s]
0
0
50
100
150
Starting Tch [C]
Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V, I(AV)<=100A
1500
1250
1000
Eas [mJ]
750
500
250
0 0 50 100 150
Starting Tch [C]
4

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